Bit line setup and discharge circuit for programming non-volatile memory

ABSTRACT

A NAND EEPROM having a shielded bit line architecture reduces supply voltage and ground noise resulting from charging or discharging bit lines. The EEPROM has a PMOS pull-up transistor and an NMOS pull down transistor connected to a virtual power node. A control circuit for charging or discharging bit lines controls the gate voltage of the PMOS or NMOS transistor to limit peak current when charging or discharging bit lines via the virtual power node. In particular, the control circuit operates the PMOS or NMOS transistor in a non-saturation mode to limit current. One such control circuit creates a current mirror or applies a reference voltage to control gate voltages. A programming method sets up bit lines by pre-charging unselected bit lines via the PMOS pull-up transistor having controlled gate voltage while latches in the programming circuitry charge or discharge selected bit lines according to respective data bits being stored. Another bit line setup includes two stages. A first stage pre-charges all bit lines via PMOS pull-up, and the second stage uses the latches to discharge or leave charged the selected bit lines depending on respective data bits being stored. The gate voltages of NMOS transistors in the programming circuitry can be controlled to reduce noise caused by discharging selected bit lines through the latches.

BACKGROUND

1. Field of the Invention

This invention relates to nonvolatile semiconductor memory devices andwrite or programming processes for nonvolatile semiconductor memorydevices.

2. Description of Related Art

EEPROMs, unlike many other nonvolatile memories, can electrically eraseold data and write new data. This flexibility in data management makesEEPROMs the preferred nonvolatile memory in system programming, wheredata may be refreshed and must be available when a system powers up.

A conventional memory cell in an EEPROM includes an N-channel celltransistor, which has a floating gate over a channel region definedbetween N+ source and drain in a P-type substrate, and a control gateoverlying the floating gate. The floating and control gates are made outof a conductive material such as polysilicon, a silicide, or a metal,and insulation layers are between the control and floating gates, andbetween the floating gate and the channel region.

In flash EEPROM, a common mechanism for erasing and programming memorycells is Fowler-Nordhiem (F-N) tunneling. F-N tunneling changes thethreshold voltage of a cell transistor by changing the amount of chargetrapped on the floating gate of the cell transistor. For example, anexemplary erase operation applies a high voltage to a substrate whileapplying a low or negative voltage to the control gate of an N-channelcell transistor. The floating gate, which is between the control gateand the substrate, has a voltage that depends on the net charge trappedon the floating gate, the capacitance between the control gate and thefloating gate, and the capacitance between the floating gate and thesubstrate. If the voltage difference between the floating gate and thesubstrate is larger than a voltage gap required for the F-N tunneling,electrons held in the floating gate tunnel from the floating gate intothe substrate. The tunneling of the electrons from the floating gate tothe substrate lowers the threshold voltage Vt of the cell transistor.

When the threshold voltage Vt is sufficiently low, the cell transistorconducts a channel current when 0V is applied to the control gate andsource of the cell transistor and a positive voltage is applied to drainof the cell transistor. A cell transistor having this lowered thresholdvoltage is referred to as an “erased cell” or as being in an “erasedstate,” which represents data value “1”.

In an exemplary programming operation that writes a data value “0” intoa cell transistor, a low voltage (e.g., 0V) is applied to the source anddrain of the cell transistor, and a high voltage (often more that 10V)is applied to the control gate of the cell transistor. In response, aninversion layer forms in a channel region under the floating gate. Thischannel region (i.e., the inversion layer) has the same voltage (0V) asthe source and drain. When a voltage difference between the floatinggate and the channel voltage becomes high enough to cause the F-Ntunneling, electrons tunnel to the floating gate from the channelregion, thereby increasing the threshold voltage of the cell transistor.A programming operation raises the threshold voltage of a celltransistor high enough to prevent channel current through the celltransistor when a positive read voltage is applied to the control gate,the source is grounded, and a positive voltage is applied to drain. Acell transistor having the raised threshold voltage is referred to as a“programmed cell” or as being in a “programmed state,” which representsdata value “0”.

EEPROMs can also achieve the high integration densities necessary for aninexpensive non-volatile memory. In particular, flash EEPROMs achievehigh integration density that is adaptable to large capacity subsidiarystorage elements, and more specifically, NAND-type flash EEPROMs providehigher integration densities than do the other well-known types ofEEPROM (e.g., NOR or AND type EEPROM).

A convention NAND-type EEPROM includes a cell array containing NANDstrings, where each NAND string includes a set of cell transistorsconnected in series. FIG. 1 shows a conventional NAND-type flash EEPROM100 including a cell array 110 containing multiple NAND strings 112. Incell array 110, each NAND string 112 includes a first select transistorST, M+1 (e.g., 16) cell transistors M0 to MM, and a second selecttransistor GT connected in series. Each first selection transistor SThas a drain connected to a corresponding bit line. Generally, all NANDstrings in a column of cell array 110 share the same bit line. Thesecond selection transistor GT in each NAND has a source connected to acommon source line CSL for the sector containing the NAND string. Gatesof the first and second selection transistors in a row of NAND strings112 are respectively coupled to a string selection line SSL and a groundselection line GSL corresponding to the row. Each word line in cellarray 110 connects to the control gates of all cell transistors in acorresponding row of cell array 110.

NAND-type flash memory 100 further includes a page buffer includinglatch circuits 130, sense circuits (not shown), and a Y or columndecoder (Y pass gates 140). The sense circuits sense the states ofselected bit lines to generate output data during a read operation.Latch circuits 130 control the voltages of selected bit lines for awrite operation as described further below. An X or row decoder (notshown) activates a string selection line to select a row of NAND strings112 and a word line that is coupled to the control gates of the celltransistors to be accessed. For reasons described further below,switching transistors 126 and 122 e or 122 o connect either the evennumbered bit lines or the odd numbered bit lines to the sense circuitsor latch circuits 130. Y pass gates 140 control and select datainput/output of sense and latch circuits.

In array, 110, a page includes a set of the cell transistors coupled toa word line associated with the page, and a block or sector is a groupof pages. A block can include one or more NAND strings 112 per bit line.Typically, a read or write operation simultaneously reads or programsand entire page of memory cells, and an erase operation erases an entireblock or sector.

To program a selected memory cell M1 in NAND flash memory 100, a bitline BL0 assigned to the memory string 112 including a selected memorycell M1 is biased to 0V. The string selection line SSL for the NANDstring 112 containing the selected memory cell M1 is biased to thesupply voltage Vcc to turn on the first selection transistor ST, and theground selection line GSL is biased to 0V to turn off the secondselection transistor GT. The word line WL1 connected to the control gateof the selected memory cell M1 is biased to a high voltage. Capacitivecoupling between the control gate and the floating gate raises thefloating gate to a voltage near the high voltage. In response to thevoltage difference between the channel region and the floating gate inthe selected memory cell M1, electrons from the channel region tunnelinto the floating gate of the selected memory cell, thereby increasingthe threshold voltage of the selected memory cell M1 to a positivelevel.

All control gates of memory cells included in the selected page are atthe high voltage for a write operation. However, the page typicallyincludes memory cells that will be programmed to store bit value “0” andother memory cells to be left in the erased state (i.e., are notprogrammed) and represent data value “1”. To avoid programming a memorycell in the same page as memory cells being programmed, the channelvoltage of the memory cell is boosted to reduce the voltage gap betweenthe floating gate and the channel region. The lower voltage gap preventssignificant F-N tunneling and keeps the memory cell in the erased statewhile other memory cells in the same page are programmed.

One useful technique for selectively increasing a channel voltage of amemory cell is often called “self-boosting”. During self-boosting, thecapacitive coupling between the floating gate and the channel regionincreases the channel voltage of a memory cell as the word line andfloating gate voltages increase. Additionally, a corresponding bit line(i.e., a bit line not connected to a cell being programmed) and stringselection line SSL are at a power supply voltage Vcc. Word lines otherthan the selected word line are at a voltage Vpass that is in a rangebetween the control gate voltage required to turn on a memory cell and avoltage high enough to cause programming. With this biasing, the stringselection transistor, which has a gate at supply voltage Vcc, turns offwhen the channel voltage of a cell transistor in the correspondingstring reaches a voltage Vcc−Vth where Vth is the threshold voltage ofthe string selection transistor. The channel voltage can further risefrom the Vcc−Vth to higher levels along the word line at the programmingvoltage.

Before programming, a “bit line setup” pre-charges to 0V the bit linesfor the selected memory cells to be programmed and pre-charges to supplyvoltage Vcc the bit lines not connected to a memory cell to beprogrammed. After programming, all of bit lines are discharged to 0Vduring a “bit line discharge”.

Recent NAND flash EEPROM chips use more dense design rules (e.g., closerline spacing) to achieve higher levels of integration. The increaseddensity increases the coupling capacitance between adjacent conductivelines such as bit lines. The larger coupling capacitance betweenadjacent bit lines makes malfunctions more likely when adjacent bitlines are charged for writing different data values. In particular, abit line at 0V can pull down the voltage of a neighboring bit lineintended to be at supply voltage Vcc, and the write operation candisturb or program the threshold voltage of an cell transistor that wasintended to remain erased.

One proposal for overcoming the problems associated with the bit linecouplings is to have adjacent bit lines coupled to memory cells indifferent pages. Accordingly, in this architecture, which is said toemploy “shielded bit lines”, sense amplifiers and latch circuits 130 areonly available for half of the bit lines and page selection transistors122 e and 122 o select a page (even or odd bit lines) for a read orprogramming operation. Reading or programming is still performed in theunit of a page, but an unselected bit line acts as a shield betweenadjacent bit lines that are in the selected page. Accordingly, theinfluence between selected bit lines is greatly reduced.

However, program inhibition in the shielded bit line architecturecharges bit lines assigned to a non-selected page (hereinafter referredto as “shielded bit lines”) and bit lines connected to memory cell thatare in a selected page but not to be programmed. A page buffer 135 cancharge bit lines in the selected page to supply voltage Vcc or 0Vaccording to corresponding data bits held in corresponding latchcircuits 130. Charging the shielded bit lines up to supply voltage Vccrequires additional circuitry because page buffers 130 are required forthe access of the selected page.

Memory 100 of FIG. 1 includes a conventional circuit that performs thebit line setup and discharging. As shown in FIG. 1, drains of MOSFETs102 e and 102 o act as connecting circuits that connect respective evenand odd bit lines to a virtual power node VIRPWR. Sources of the MOSFETs150 e and 150 o connect in common to node VIRPWR, and an inverter 104charges node VIRPWR to supply voltage Vcc during a bit line setup and toground (0V) when all of the bit line discharge.

For bit line setup, inverter 104 charges node VIRPWR to supply voltageVcc. Assuming that even-numbered bit lines are selected for programming,a signal VBLo is activated to turn on MOSFETs 102 o and thereby chargethe non-selected bit lines (i.e., odd-numbered bit lines) to supplyvoltage Vcc. (Gate selection signal VBLe remains deactivated during bitline setup if even-numbered bit lines are selected for programming.)After completing a programming operation, node VIRPWR goes to 0V, andsignals VBLe and VBLo are both activated to turn on all MOSFETs 102 oand 102 e, thereby discharging all the bit lines to 0V.

As circuit density, data access rates, and required charging anddischarging capacities increase, bit line setup and bit line dischargecause more noise in the power supply voltages Vcc or the ground voltage.In particular, the rapid switching when driving virtual power nodeVIRPWR to supply voltage Vcc or ground creates a large transient noisepeak. Such noise concerns are likely to worsen as the memory circuitdensities increase since the bit line setup raises half of the bit lines(the even-numbered or the odd-numbered) to supply voltage Vcc beforeprogramming. Further, discharging bit lines to ground (0V) in the worstcase discharges all of bit lines after programming.

SUMMARY

In accordance with the invention, disclosed circuits and methods reducethe power and ground noise that occur when charging bit lines up tosupply voltage Vcc or discharging the bit lines to ground (0V). Inparticular, one embodiment of the invention is a NAND EEPROM having ashielded bit line architecture. This NAND EEPROM has a virtual powernode that is connected to bit lines for charging or discharging of thebit lines. A PMOS pull-up transistor and an NMOS pull down transistorconnect to the virtual power node, and a control circuit for charging ordischarging bit lines controls the gate voltages of the PMOS pull-uptransistor and the NMOS pull-down transistor to limit peak current whencharging or discharging bit lines. In particular, the control circuitoperates the PMOS or NMOS transistor in a non-saturation mode to limitcurrent. One such control circuit creates a current mirror or applies areference voltage to control gate voltages.

One programming operation in accordance with the invention sets up bitlines by pre-charging unselected bit lines via the virtual power nodeand the PMOS pull-up transistor having controlled gate voltage. Latchesin the programming circuitry of the EEPROM charge or discharge selectedbit lines according to respective data bits being stored. At the end ofthe programming operation, all of the bit lines are discharged via thevirtual power node and the NMOS pull-down transistor, which then has acontrolled gate voltage.

Another bit line setup includes two stages. The first stage pre-chargesall bit lines via the virtual power node and PMOS pull-up. The secondstage uses the latches in a page buffer to discharge or leave chargedthe selected bit lines depending on respective data bits being stored.The gate voltages of NMOS transistors in the programming circuitry thatconnect the page buffer to the bit lines can be controlled to reducenoise caused by discharging selected bit lines through the latches.

Yet another embodiment of the invention is a non-volatile memory devicesuch as a NAND flash EEPROM having a shielded bit line architecture. Thenon-volatile memory device includes an array of memory cells and a bitline bias circuit. The array of memory cells includes bit lines coupledto memory cells in respective columns of the array and word linescoupled to the memory cells in respective rows of the array. The biascircuit is coupled to the bit lines and includes a switch and a: controlcircuit. The control circuit operates the switch to limit peak currentdrawn when simultaneously changing the voltage on a set of the bitlines.

In one embodiment, the switch includes a first PMOS transistor coupledbetween a supply voltage and a virtual power node and/or a first NMOStransistor coupled between a ground and the virtual power node. Aconnecting circuit selectably connects the virtual power node to evenand odd bit lines. In another embodiment, the bias circuit includes NMOStransistors that are between the bit lines and respective latches in apage buffer for the memory device.

The control circuit controls the gate voltage of the PMOS and/or NMOStransistors. In particular, the control circuit can bias a PMOStransistor to conduct less than a saturation current to control currentwhen charging bit lines, turn on the PMOS transistor to maintain thecharged state of the bit lines, and turn off the PMOS transistor fordischarging of the bit lines. Similarly, the control circuit can bias anNMOS transistor to conduct less than a saturation current to controlcurrent when discharging bit lines, turn on the NMOS transistor tomaintain the discharged state of the bit lines, and turn off the NMOStransistor for charging of the bit lines. Accordingly, the non-volatilememory device can limit current and reduce noise when a virtual powernode is used to charge or discharge bit lines or when a page bufferdischarges bit lines.

In one embodiment, the control circuit includes: an output terminalconnected to the gate of the first PMOS transistor; sources of areference voltage, the supply voltage, and a ground voltage; and aswitch circuit operable to connect any of the reference voltage, thesupply voltage, and the ground voltage to the output terminal. Thesource of the reference voltage can include a second PMOS transistor anda second NMOS transistor connected in series between the supply voltageand the ground voltage. A gate and a drain of the second PMOS transistorare connected together and provide the reference voltage, and when theswitch circuit operates to connect the reference voltage to the outputterminal, current through the first PMOS transistor mirrors a currentthrough the second PMOS transistor.

Another exemplary embodiment of the invention is a nonvolatile memoryincluding a cell array, a virtual power node and a connecting circuit.The connecting circuit controls connections of the virtual power node tobit lines in the cell array for charging or discharging of the bit linesthen connected to the virtual power node. A PMOS transistor, an NMOStransistor, and a control circuit control the current flowing throughthe virtual power node. The PMOS transistor is coupled between thevirtual power node and a supply voltage, and the NMOS transistor iscoupled between the virtual power node and a ground. The control circuitapplies a first control signal to a gate of the PMOS transistor and asecond control signal to a gate of the NMOS transistor.

One embodiment of this control circuit includes a first switch coupledbetween a source of a first reference voltage and a first node foroutput of the first control signal. When the first switch is activated,the first control signal is at the first reference voltage, and thefirst reference voltage applied to the gate of the PMOS transistorcauses the PMOS transistor to conduct a non-saturation current.

The control circuit typically further includes a second switch coupledbetween a source of a second reference voltage and a second node foroutput of the second control signal. When the second switch isactivated, the second control signal is at the second reference voltage,and the second reference voltage applied to the gate of the NMOStransistor causes the NMOS transistor to conduct a non-saturationcurrent.

The control circuit may further include first and second pairs ofseries-connected transistors. The first pair of transistors is connectedin series between the supply voltage and ground, with the first nodebeing between the transistors in the first pair. The second pair oftransistors is connected in series between the supply voltage andground, with the second node being between the transistors in the secondpair. Turning on one of the transistors in either pair can set the firstand second control signals at ground or the supply voltage to maintainthe virtual power node as required for charging or discharging of bitlines.

This embodiment of the non-volatile memory may further include: a pagebuffer; a plurality of NMOS transistors coupled between the page bufferto the bit lines of the cell array; and a control circuit. The controlcircuit operates the NMOS transistors to conduct a non-saturationcurrent when the page buffer discharges one or more of the bit lines.

Another embodiment of the invention is a programming method for anon-volatile memory. The programming method includes pre-charging bitlines to a first voltage by operating a switch that is between the firstvoltage and the bit lines and thereby limiting peak current flowingthrough the switch to the plurality of bit lines. Applying a secondvoltage to a selected word line programs one or more selected memorycells coupled to the selected word line, but the first voltage remainingon one of the bit lines prevents programming of a memory cell coupled tothat bit line and the selected word line. Typically, the switchcomprises a transistor and operating the switch comprises controllingthe transistor to conduct less than a saturation current, for example,by connecting the transistor into a current mirror circuit that limitsthe current through the transistor.

The pre-charging can charge all bit lines or just the unselected bitlines. When just the unselected bit lines are charged, latches in a pagebuffer for the memory charge or discharge selected bit lines accordingto corresponding data bits to be written. When pre-charging charges allbit lines, the page buffer only needs to discharge or maintain thecharged state of selected bit lines according to the data bits beingwritten. When the only currents through the latches are discharging bitlines to ground, the gate voltages of NMOS transistors connecting thelatches to the bit lines can control the current and reduce noise causedby current through the latches.

Yet another embodiment of the invention is programming method thatincludes: pre-charging selected bit lines and unselected bit lines to afirst voltage using current through a PMOS transistor that has a gatevoltage controlled to limit current flow to the selected and unselectedbit lines. The unselected bit lines are interleaved among the selectedbit lines. After pre-charging, the programming method further includesdischarging at least some of the selected bit lines to correspondingdata latches through a plurality of NMOS transistors that are betweenthe selected bit lines and the data latches. Gate voltages of the NMOStransistors are controlled to limit current through the NMOS transistorsduring the discharging. Applying a second voltage to a selected wordline programs one or more selected memory cells coupled to the selectedword line, but the first voltage remaining on one of the bit linesprevents programming of a memory cell coupled to that bit line and theselected word line.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a conventional NAND flash EEPROM.

FIG. 2 shows a NAND flash EEPROM in accordance with an embodiment of theinvention.

FIGS. 3A and 3B are circuit diagrams of control circuits suitable foruse in the NAND flash EEPROM of FIG. 2.

FIG. 4 is a circuit diagram of a reference voltage generator.

FIG. 5 is a circuit diagram of a variation of the control circuit ofFIG. 3A.

FIG. 6 is a timing diagram of a programming operation in the NAND flashEEPROM of FIG. 2.

FIG. 7 is a circuit diagram of a sensing and latch circuit in accordancewith an embodiment of the invention.

FIG. 8 is a timing diagram of an alternative programming operation inthe NAND flash EEPROM of FIG. 2.

Use of the same reference symbols in different figures indicates similaror identical items.

DETAILED DESCRIPTION

In accordance with an aspect of the present invention, transistorsbiased to conduct less than a saturation current can reduce noise insupply and ground voltages by reducing the peak currents during chargingor discharging of bit lines for a programming operation.

FIG. 2 shows a NAND flash EEPROM 200 according to an embodiment of theinvention that reduces the peak current when charging or discharging bitlines. NAND flash EEPROM 200 includes a cell array 110, which can be aconventional NAND array such as described above in regard to FIG. 1. Inparticular, cell array 110 includes NAND strings 112 attached to bitlines BL0 to BLN. Although FIG. 2 shows only a single NAND string 112coupled to each bit line, a typical embodiment would have multiple NANDstrings coupled to each bit line.

Each NAND string 112 includes first and second select transistors ST andGT and M+1 cell transistors M0 to MM, which are connected in series.Each first select transistor has a drain coupled to a corresponding oneof bit lines BL0 to BLN and a source coupled to cell transistor M0 inthe associated NAND string 112. The first select transistors ST in eachrow of NAND strings 112 have gates coupled to a string select line SSL.Each second select transistor GT has a drain coupled to cell transistorMM in the associated NAND string 112 and a source connected to a commonsource line CSL. The second select transistors GT in each row of NANDstrings 112 have gates coupled to a ground select line GSL.

Cell array 110 employs a shielded-bit line architecture. In particular,in each row of array 110, the cell transistors in NAND strings 112 econnected to even-numbered bit lines BL0 to BL(N−1) form one page andcell transistors in NAND strings 112 o coupled to odd-numbered bit linesBL1 to BLN form another page. Selection transistors 122 e and 122 oselect either an even page or an odd page of cell transistors for anaccess. Each word line WL0 to WLM connects to cell transistors in everyNAND string 112 in a row of NAND strings 112, and activation of aparticular word line selects the row of array 110 associated with theactivated word line.

In general, a word line in memory array having the shielded-bit linearchitecture may correspond to more than two pages, for example, fourpages. In the case of four pages per row, an access operation connectsone quarter of the bit lines (i.e., the bit lines associated with theselected page) to sense and latch circuits 130. Three quarters of thebit lines (i.e., the bit lines associated with unselected pages) provideshielding to reduce the effects of coupling capacitance between the bitlines. The shielding process for a memory having more than two pages perrow is substantially the same as the shielding process for a memoryhaving two pages per row. For ease of description, the example of twopages per row is more fully described herein.

While conventional NAND flash memories use inverters for charging ordischarging a virtual power node and bit lines, NAND flash memory 200employs a PMOS transistor 202 with a gate receiving a control signalVIRPWRP and an NMOS transistor 204 with a gate receiving a controlsignal VIRPWRN. PMOS transistor 202 charges a node VIRPWR up to supplyvoltage Vcc, and NMOS transistor 204 pulls node VIRPWR down to 0V. Acontrol circuit 210 generates control signal VIRPWRP, and a controlcircuit 220 generates control signal VIRPWRN.

FIGS. 3A and 3B are schematic diagrams of embodiments of controlcircuits 210 and 220 that generate control signals VIRPWRP and VIRPWRN,respectively.

Referring to FIG. 3A, control circuit 210 includes two PMOS transistors302 and 306, two NMOS transistors 304 and 308, and a switch 310. PMOStransistor 302 and NMOS transistor 304 are connected in series betweensupply voltage Vcc and ground, and control signal VIRPWRP is generatedfrom a output node between transistors 302 and 304. PMOS transistor 306and NMOS transistor 308 are also connected in series between supplyvoltage Vcc and ground, and the gate of transistor 306 is coupled to anode between transistors 306 and 308. Switch 310 controls whether thenode between transistors 306 and 308 is electrically connected to theoutput node between transistors 302 and 304. In an exemplary embodiment,switch 310 includes a pass gate capable of conducting with minimalvoltage drop at low or high voltage levels.

The input signals for control circuit 210 include three control signalsPCTLP, REFCTLP, and NCTLP and a reference voltage VREF. Control signalPCTLP is applied to the gate of PMOS transistor 302. Control signalREFCTLP controls switch 310, and control signal NCTLP is applied to thegate of NMOS transistor 304. A circuit such as a state machine (notshown) can activate control signals PCTLP, REFCTLP, and NCTLP accordingto the timing required for programming of memory cells as describedfurther below.

When control signal PCTLP is at a low level, PMOS transistor 302 pullscontrol signal VIRPWRP to high level, which turns off PMOS transistor202 (FIG. 2). Alternatively, if control signal NCTLP is at supplyvoltage Vcc, NMOS transistor 304 turns on and pulls control signalVIRPWRP down to 0V, which turns on PMOS transistor 202.

To reduce a peak current before programming, during the bit line setupperiod when node VIRPWR goes to supply voltage Vcc from 0V, controlsignals NCTLP and PCTLP go to low and high levels, respectively, andturn off both transistors 302 and 304. Signal REFCTLP is activated(e.g., at supply voltage Vcc) to connect the node between transistors306 and 308 to the gate of PMOS transistor 202 (FIG. 2). Thisconfiguration creates a current mirror for which the current throughPMOS transistor 202 mirrors the current through PMOS transistor 306.Reference voltage VREF, which is applied to the gate of NMOS transistor,controls the current through series connected transistors 308 and 306,and accordingly controls the current through PMOS transistor 202. Thenon-saturation current through PMOS transistor 202 causes a controlledrise in the voltage of node VIRPWR that causes the voltage of connectedeven or odd numbered bit lines to correspondingly increase. Thus, thecurrent drawn during the bit line setup is controlled to avoid suddenpeaks, thereby reducing the power noise.

When the bit lines reach a sufficiently high voltage, control signalREFCTLP is deactivated, and control signal NCTLP is activated to supplyvoltage Vcc, turning on transistor 304. Thus, control signal VIRPWRPfalls to ground voltage (0V), turning on PMOS transistor 202 to maintainbit lines at the supply voltage Vcc.

Referring to FIG. 3B, control circuit 220 includes a PMOS transistor352, an NMOS transistor 354, and a switch 360. PMOS transistor 352 andNMOS transistor 354 are connected in series between supply voltage Vccand ground, and control signal VIRPWRN is generated from a output nodebetween transistors 352 and 354. In an exemplary embodiment, switch 360controls whether reference voltage VREF is applied to the output nodebetween transistors 352 and 354.

NMOS transistor 204, which is connected between node VIRPWR and theground, turns on in response to control signal VIRPWRN going to supplyvoltage Vcc. In particular, when control signal PCTLN is at 0V,transistor 352 turns on to pull control signal up to supply voltage Vcc.This turns on NMOS transistor 204, which pulls node VIRPWR down to 0V.Alternatively, when control signal NCTLN is at supply voltage Vcc, NMOStransistor 354 turns on and pulls control signal VIRPWRN to 0V, whichturns off NMOS transistor 204 to maintain node VIRPWR at supply voltageVcc.

To reduce peak currents and system noise during the discharge period,both transistors 352 and 354 are turned off, and control signal REFCLTNis activated so that switch 360 applies reference voltage VREF to theoutput node between transistors 352 and 354. Accordingly, control signalVIRPWRN and the gate of NMOS transistor 204 are at reference voltageVREF, which limits the current through NMOS transistor 204. The limitedcurrent reduces ground noise that large peak current could otherwisecause when simultaneously discharging bit lines.

In the exemplary embodiment of the invention illustrated in FIGS. 3A and3B, reference voltage VREF, which can be carefully controlled using areference voltage generator, controls the current during the bit linesetup period and during the bit line discharge period. FIG. 4 is showsan exemplary circuit 400 that includes a reference voltage 410 thatgenerates a reference voltage VREF0 and a level shifter 420 thatconverts reference voltage VREF0 to the reference voltage VREF havingthe desired level.

In reference voltage generator 410, a resistor R1, a resistor R2, anNMOS transistor MN1, and a resistor R3 are connected in series betweensupply voltage Vcc and ground. The gate of transistor MN1 is connectedto a node 412 between resistors R1 and R2. Another NMOS transistor MN2is connected between node 412 and ground. With this configuration, thereference voltage VREF0 from the drain of NMOS transistor MN1 remainsconstant when supply voltage Vcc or the temperature vary.

Level shifter 420 includes a PMOS transistor MP1, a resistor R4, and aresistor R5 that are connected in series between supply voltage Vcc andground. A differential amplifier 422, which controls the gate voltage oftransistor MP1, has a negative input and a positive input connected torespectively receive reference voltage VREF0 and a voltage from a nodebetween transistors R4 and R5. Reference voltage VREF thus generatedfrom the drain of PMOS transistor MP1 has a level that depends on VREF0and the ratio of the resistances of resistors R4 and R5.

A reference voltage generated by circuit 400 or by any other suitablereference voltage generator circuit can directly control the gatevoltages of NMOS or PMOS transistors to limit discharging or chargingcurrents and avoid peak currents that cause noise. A current mirrorcircuit as described above can use the same reference voltage togenerate suitable control voltages for PMOS or NMOS transistors of thecomplementary conductivity type. Alternatively, embodiments can usindependent mechanisms for current control through transistors ofdifferent conductivity types. For example, FIG. 5 shows an alternativeembodiment of control circuit 210. In FIG. 5, a current source 508controls the current through transistor 306 and through the currentmirror created during the bit line setup period. A similar andindependent current mirror circuit can limit the current flow during thebit line discharge period.

FIG. 6 is a timing diagram illustrating signal levels during anexemplary programming operation. The exemplary programming operationprograms cell transistors in selected even-numbered NAND strings 112 eand pre-charges odd numbered bit lines B/Lo to supply voltage Vcc. Theprogramming operation of FIG. 6 is described herein in the context ofNAND flash memory 200 of FIG. 2 including control circuits 210 and 220as respectively illustrated in FIGS. 3A and 3B.

In FIG. 6, a bit line setup period begins at a time T0 and extends to atime T1. For charging of the odd numbered bit lines B/Lo, controlsignals PCTLP, REFCTLP, PCTLN, NCTLN, and VBLo are activated (i.e., atsupply voltage Vcc). Control signals NCTLP, REFCTLN, and VBLe remaindeactivated (i.e., at 0V). As a result, control signals PCTLN, NCTLN,and REFCTLN cause transistor 354 in control circuit 220 to pull signalVIRPWRN to 0V, which shuts off NMOS transistor 204. Control signalsPCTLP and NCTLP turn off transistors 302 and 304, and control signalREFCTLP connects PMOS transistor 202 in a current mirror circuitincluding transistors 306 and 308. The current through PMOS transistor202, which charges node VIRPWR, is thus limited according to the currentthrough transistors 306 and 308. Signal VBLo turns on transistors 102 o,which electrically connect node VIRPWR to the odd numbered bit linesB/Lo. Accordingly, the odd numbered bit lines B/Lo charge up to supplyvoltages Vcc at a controlled rate as does node VIRPWR. This reduces thesupply voltage noise created by charging the odd bit lines B/Lo at anuncontrolled rate.

In the program operation of FIG. 6, node VIRPWR does not charge the evennumbered bit lines B/Le because signal VBLe turns off transistors 102 eto disconnect node VIRPWR from the even numbered bit lines B/Le. Duringthe setup period, page buffer 135 including latch circuits 130 chargeseven numbered bit lines B/Le to levels that depend on the bit valuesbeing stored in respective cell transistors. In particular, latchcircuits 130 latch respective input data bits from Y pass gates 140, andeach latch circuit 130 generates an output signal at a high or low level(supply voltage Vcc or 0V) if the corresponding input data bit is “1” or“0”. For the bit line setup period, signals BLST and BLSHFe are activateto turn on transistors 122 e and 126 and connect latch circuits 130 torespective even bit lines. A signal BLSHFo remains at a low level todisconnect the odd numbered bit lines from sense and latch circuits 130.

After the bit line setup period, a programming operation extends from atime T1 to a time T2. At time T1, control signal REFCTLP becomesdeactivated, and control signal NCTLP becomes activated. As a result,transistor 304 in control circuit 210 pulls signal VIRPWRP from anintermediate voltage level to 0V, and signal VIRPWRP turns on PMOStransistor 202. The programming then proceeds in the conventional mannerwell known for NAND flash memory. In particular, a row decoding circuitcharges select lines SSL and CSL to the supply voltage Vcc and chargesthe selected word line to a programming voltage, typically about 10V.During the programming, the combination of the high programming voltageon a word line coupled to a cell transistor and a low voltage on the bitline coupled to the NAND string containing the cell transistor changesthe cell transistor from the erased state (representing bit value “1”)to the programmed state (representing bit value “0”).

After the programming period, a bit line discharge period extends fromtime T2 to a time T3. For discharging of the even and odd bit lines B/Leand B/Lo, control signals PCTLN REFCTLN, VBLe, and VBLo are activated(i.e., at supply voltage Vcc). Control signals PCTLP, NCTLP, REFCTLP,and NCTLN become or remain deactivated (i.e., at 0V). As a result,control signals PCTLP, NCTLP, and REFCTLP cause transistor 302 incontrol circuit 210 to pull signal VIRPWRP to supply voltage Vcc, whichshuts off PMOS transistor 202. Control signals PCTLN and NCTLN turn offtransistors 352 and 354, and control signal REFCTLN sets control signalVIRPWRN at reference voltage VREF, which limits the current through NMOStransistor 204. Signals VBLe and VBLo turn on transistors 102 e and 102o, which electrically connect node VIRPWR to the even and odd numberedbit lines B/Le and B/Lo. Accordingly, the bit lines discharge to 0V at acontrolled rate as does node VIRPWR. This reduces the ground noiseotherwise created by simultaneous, uncontrolled discharge of all of thelines B/Lo.

As described above, the bit line setup process reduces noise generatedfrom charging of unselected (e.g., odd) bit lines. However, latchcircuits 130 in page buffer 135 charge the selected (e.g., even) bitlines. In the worst case, all data bits are “high”, and page buffer 135quickly charges about half of the bit lines to supply voltage Vcc. Thiscreates a large peak current and supply voltage noise that is difficultto reduce. In particular, NMOS transistors 126 and 122, which connectthe bit lines to the latch circuits 130 of page buffer 135, are not wellsuited for current restriction when charging selected bit lines tosupply voltage Vcc. Further, adding circuit elements (e.g., PMOStransistors) to control the current flowing between each latch circuit130 and the respective bit lines would be difficult because the spacebetween the bit lines is narrow in a highly integrated semiconductormemory. (In contrast, PMOS transistors 202 are not required to be at thesame pitch as the bit lines because a common node VIRPWR serves all bitlines.)

In accordance with another aspect of the invention, currents spikesresulting from latch 130 simultaneously charging or discharging bitlines of the selected page are avoided using a two-part bit line setupoperation and discharging through sensing and latch circuit 130. FIG. 7is a circuit diagram of sense and latch circuitry for a single data bit.As noted above, page selection transistors 122 e and 122 o connecteither an even bit line or an odd bit line to a sensing node 720 for anaccess. For a write operation, latch 130 discharges the connected bitline only if latch 130 holds a data value “0” when signal BLSLT turns ontransistor 125.

FIG. 8 is a timing diagram of a programming operation that reducessupply voltage noise that results from latch circuits 130 charging anddischarging of selected bit lines. The programming operation of FIG. 8uses a bit line setup that includes two parts. During a first part, allof the bit lines (even and odd) are charged at a controlled rate. Duringthe second part, latch circuits 130 discharge selected bit linespreferably at a controlled rate.

As shown in FIG. 8, both control signals VBLe and VBLo are activated tothe supply voltage Vcc during the first part SETUP(1) of the bit linesetup. Accordingly, node VIRPWR is electrically connected to all of thebit lines. Additionally, control signals PCTLP, REFCTLP, PCTLN, andNCTLN are activated, and control signals NCTLP and REFCTLN aredeactivated. As described above these states for control signals PCTLN,NCTLN, and REFCTLN cause transistor 354 in control circuit 220 to pullsignal VIRPWRN to 0V, which shuts off NMOS transistor 204. Controlsignals PCTLP and NCTLP turn off transistors 302 and 304, and controlsignal REFCTLP connects PMOS transistor 202 in a current mirror circuitincluding transistors 306 and 308. The current through PMOS transistor202, which charges node VIRPWR, is thus limited according to the currentthrough transistors 306 and 308. Signals VBLe and VBLo turn ontransistors 102 e and 102 o, which electrically connect node VIRPWR toall bit lines. Accordingly, the bit lines all charge up to supplyvoltages Vcc at a controlled rate as does node VIRPWR.

During or before the first part of the bit line set up, latches 130 canlatch data bits from associated data lines. In the circuitry of FIG. 7for example, a precharge signal PRE can be activated (low) to prechargenode 720 and latch 130. An enable signal PBENB then disables an inverter732 in latch 130, and Y pass gate 140 is activated to conduct a datasignal from a data line to an input terminal of an inverter 734. A latchsignal LATCH turns off a transistor 738 so that the data signal controlsthe output signal of inverter 734, which is the input signal of inverter732. When the output signal of inverter 734 settles, signal PBENBactivates inverter 732. During this time, signal BLSLT keeps transistor126 off, and Y pass gate 140 is shut off before signal BLSLT turnstransistor on during the second part SETUP(2) of the bit line setup.

At the end of the first part SETUP(1) of the bit line setup, signalREFCTLP is deactivated to disconnect PMOS transistor 202 from thecurrent mirror, and signal NCTLP is activated to drive signal VIRPWRP to0V and fully turn on PMOS transistor 202.

Control signal BLSLT is at a low level (0V) during the first part of thesetup to shut off NMOS transistors 126 and disconnect latch circuits 130from the bit lines. During the second part SETUP(2) of the bit linesetup, the reference voltage VREF is applied to the gate of NMOStransistors 126. Signal BLSHFe is activated to turn on transistors 122 eand connect latch circuits 130 to respective even bit lines B/Le. (In analternative programming operation that programmed cell transistorscoupled to odd numbered bit lines B/Lo, signal BLSHFo would be activatedinstead of signal BLSHFe.) Similarly, control signal VBLe is deactivatedduring the second part SETUP(2) of the bit line setup to shut offtransistors 102 e and disconnect the even bit lines B/Le from nodeVIRPWR.

All of the bit lines are charged when the second part SETUP(2) of thebit line setup starts. Latch circuits 130 discharge the bit linescorresponding to cell transistors being programmed to store the bitvalue “0” and maintain the charging of bit lines corresponding to celltransistors storing the bit value “1”. Unlike the case of charging bitlines to supply voltage Vcc, NMOS transistors 126 are well suited forcontrolling the current when discharging the selected bit lines. Acontrol circuit 230, which is similar or identical to control circuit220, can set the reference voltage. VREF so that transistors 126 conductnon-saturation currents. (Signals BLSHFe and BLSHFo can similarlycontrol the gate voltages of transistors 122 e and 122 o.) Withtransistors 126 limiting the current, latch circuits 130 do not cause aspike in the current. Accordingly, the program operation of FIG. 8reduces the noise that latch circuits 130 might otherwise create in thesupply voltage Vcc or ground.

Following the second part of the bit line setup, the programmingoperation of FIG. 8 proceeds to program selected cell transistors anddischarge all of the bit lines in the same manner described above inregard to FIG. 6.

Although the invention has been described with reference to particularembodiments, the description is only an example of the invention'sapplication and should not be taken as a limitation. Various adaptationsand combinations of features of the embodiments disclosed are within thescope of the invention as defined by the following claims.

1-30. (canceled)
 31. A programming method for a non-volatile memory,comprising: pre-charging a plurality of bit lines to a first voltage,wherein the pre-charging comprises operating a switch that is between asupply voltage and the plurality of bit lines to limit peak currentflowing through the switch to the plurality of bit lines; and applying asecond voltage to a selected word line to program one or more selectedmemory cells coupled to the selected word line, wherein the firstvoltage, assigned to a non-selected page and bit lines connected tomemory cells that are in a selected page but not to be programmed,remains on one of the bit lines and prevents programming of a memorycell coupled to that bit line and the selected word line.
 32. The methodof claim 31, wherein the switch comprises a transistor and operating theswitch comprises controlling the transistor to conduct less than asaturation current of the transistor.
 33. The method of claim 31,wherein the switch comprises a transistor and operating the switchcomprises connecting the transistor into a current mirror circuit thatlimits the current through the transistor.
 34. The method of claim 31,wherein the pre-charging charges all bit lines that are connected tomemory cells that are connected to the selected word line.
 35. Themethod of claim 34, further comprising discharging a selected set of thebit lines, the selected set of bits lines connected to memory cell to beprogrammed.
 36. The method of claim 35, wherein discharging comprisesoperating a transistor that conducts a current from the selected bitlines so that the transistor conducts less than a saturation current ofthe transistor.
 37. The method of claim 31, wherein the pre-chargingcomprises only charging unselected bit lines.
 38. The method of claim31, wherein the first voltage is less than the supply voltage.